Thin Film Pb(0.9)Sn(0.1)Se Photoconductive Infrared Detectors, Metallurgical and Electrical Measurements.

Abstract

Pb(0.9)Sn(0.1)Se thin films were deposited onto cleaved (111) CaF2 and BaF2 substrates by either an open one-boat evaporation method or a Knudson type graphite boat method. Photoconductivity was observed after isothermal annealing in Pb/Sn rich vapor to reduce their carrier concentrations to the mid-10 to the 16th power to mid-10 to the 17th power range. At 100K, 500K blackbody responsivities up to 60V/W have been developed, compared with the best blackbody responsivities around 100-125 V/W reported for commercial photo-voltaic detectors of Pb(1-x)Sn(x)Te operated at 77K. (Author Modified Abstract)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1972
Accession Number
AD0758519

Entities

People

  • William Godfrey Mcbride Jr

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Annealing
  • Detectors
  • Electrical Measurement
  • Evaporation
  • Films
  • Graphitic Materials
  • Infrared Detectors
  • Measurement
  • Photoconductivity
  • Substrates
  • Thin Films
  • Vapors
  • Warning Systems

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thermal Physics or Thermal Science.
  • Thin Film Deposition Science.