Evaluation of Semiconductor Device Analysis Using the Net-2 Computer Program

Abstract

SMETAL OXIDE SEMICONDUCTORS, CDC 6600 COMPUTERS, TRANSIENT RADIATION EFFECTS(ELECTRONICS)An evaluation of the capability of the NET-2 Circuit/System Analysis Computer Program to perform analysis of radiation effects on complex semiconductor devices and microcircuits is presented. The mathematical models considered include both the terminal built-in models and Linvill lumped models of bipolar and MOS devices. Computations of electrical performance and transient radiation-induced response are performed and compared to available exact results. The derivation of complex models for the elements of a junction- isolated bipolar microcircuit (including the multiple emitter transistor) is demonstrated as well as the analysis of a complete junction-isolated TTL Gate microcircuit. NET-2 capabilities in terms of computer run times, numbers of circuit elements allowed, and accuracy of solution are discussed. Device analysis examples include a p-n junction diode and an intrinsic lumped model p- n-p transistor.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1972
Accession Number
AD0758883

Entities

People

  • J. P. Raymond
  • M. G. Krebs

Tags

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Bulk Semiconductors
  • Circuit Analysis
  • Circuits
  • Computer Programs
  • Differential Equations
  • Electronics Laboratories
  • Ionizing Radiation
  • N Type Semiconductors
  • P Type Semiconductors
  • P-N Junction Diodes
  • P-N Junctions
  • Partial Differential Equations
  • Power Electronics
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Engineering
  • Physics

Readers

  • Computational Modeling and Simulation
  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics