Gating Transistor Module for Night Vision Laboratories.

Abstract

This was a two part task, to increase the breakdown voltage in a single junction switching transistor and to reduce the size and weight of the packaged group of these junctions for a given high voltage gating function. The device design was a compromise between breakdown voltage, the switching speed, and peak current carrying capability. The packaging is the application of TRWS molding capability to produce a single junction configuration and then the multiple junction module.

Document Details

Document Type
Technical Report
Publication Date
Jun 07, 1968
Accession Number
AD0758907

Entities

People

  • F. Levien
  • R. Clarke

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Buildings And Structures
  • Electronics Laboratories
  • High Voltage
  • Night Vision
  • Packaging
  • Research Facilities
  • Switching
  • Transistors
  • Voltage

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology
  • Sensor Fusion and Tracking Systems.
  • Software Engineering