AC Hall Mobility and Electrical Conductivity in Amorphous Threshold Switching Semiconductors

Abstract

Hall mobility measurements were made on bulk samples of the amorphous threshold switching compositions As(34.5) Te(27.9) Ge(15.6) S(22.0) and As(35) Te(40) Ge(7) Si(18) at frequencies from 10 to 100 kHz and at several temperatures between 220 and 250 K. The measurements were performed using a special Corbino disc apparatus designed for high resistance samples. A very high Hall mobility, which is an oscillatory, temperature dependent function of frequency, was found in both compositions, although it is not identical in the two materials. The frequency dependence was verified using a modified van der Pauw technique, which also demonstrated that the high mobilities correspond to positive carriers.

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Document Details

Document Type
Technical Report
Publication Date
Mar 02, 1973
Accession Number
AD0759004

Entities

People

  • G. P. Carver
  • R. S. Allgaier

Organizations

  • Naval Ordnance Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Chemical Oxygen Iodine Lasers
  • Coils
  • Computers
  • Detectors
  • Electrical Conductivity
  • Electromagnetic Fields
  • Electronics
  • Frequency
  • Magnetic Fields
  • Materials
  • Measurement
  • Mobility
  • Ordnance Laboratories
  • Resistance
  • Semiconductor Devices
  • Semiconductors
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene