Radiation Effects on Semiconductor Materials and Devices.
Abstract
E), (*SEMICONDUCTORS, *DAMAGE), RECOMBINATION REACTIONS, CARRIERS(SEMICONDUCTORS), CRYSTAL DEFECTS, SILICON, NEUTRON REACTIONS, ANNEALING, SOLAR CELLS, GALLIUM ARSENIDES, GAMMA RAYS, PHOTOCONDUCTIVITY, (U)PHOTOCONDUCTIVITYTechniques are described for obtaining recombination-center parameters from carrier lifetime studies. Studies of recombination at disordered regions include damage comparisons for fusion- and fission-neutron-irradiated bulk silicon and silicon solar cells, and diffusion length measurements in neutron-irradiated silicon and gallium arsenide. Short-term annealing investigations include the development of expressions for evaluating early-time damage ratios and studies of transient recovery in bulk silicon, silicon solar cells, and bipolar transistors following bursts of both 14-MeV and reactor neutrons. Measurement techniques are described for determining drift mobility in heavily irradiated silicon and for determining the injection-level dependence of lifetime in semiconductors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1973
- Accession Number
- AD0759946
Entities
People
- Joseph. R. Srour
- Orlie L. Curtis Jr.
- Siegfried Othmer