Investigation of the Properties of Thin Insulating Films Deposited with an Ion Beam System.
Abstract
A preliminary study is described wherein thin film insulators deposited with a unique ion beam deposition system were investigated for radiation resistance. Metal-insulator-semiconductor structures were fabricated and used to evaluate both an insulating carbon film and ion beam deposited Al2O3 films. I-V and C-V measurements are described for both types of materials for eventual application in field effect devices. These showed little shift in flat-band voltage under irradiation, however, some surface charge effects require further study. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1973
- Accession Number
- AD0760118
Entities
People
- Ronald W. Chabot
- Sol Aisenberg