An Experimental Study of Noise in MNOSFET Devices.

Abstract

The theory of the operation of metal-nitride-oxide-semiconductor field effect transistors (MNOSFET's) is briefly presented, as is the theory of noise in metal-insulator-semiconductor field effect transistors (MISFET's). The noise theory, as developed for a MISFET device, shows the noise to be dependent upon both the gate-to-source voltage and the threshold voltage. Since a MNSOFET device is a variable thresholding device, it is probable that the noise of such a device would be dependent upon the state of the device. Indeed, this has been shown to be the case. An experimental investigation of the noise of the MNOSFET device is accomplished using a digital spectral analysis measurement system. The measurement system is based upon a digital correlation analysis followed by a computation of a fast Fourier transformation in order to obtain the noise power spectrum. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1973
Accession Number
AD0760544

Entities

People

  • Peter C. Hart
  • Robert F. Cotellessa

Organizations

  • Clarkson University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Correlation Analysis
  • Field Effect Transistors
  • Fourier Transformation
  • Measurement
  • Metal Nitride Oxide Semiconductors
  • Metal Oxide Semiconductors
  • Power Spectra
  • Semiconductor Devices
  • Semiconductors
  • Spectra
  • Transistors

Fields of Study

  • Physics

Readers

  • Adaptive Control and Estimation with Uncertainty in Dynamic Systems.
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics