Optical and Electrical Properties of Amorphous Elemental Semiconductors

Abstract

The authors report results of electrical and optical measurements on amorphous silicon and germanium. It was found that the electrical and optical properties of amorphous silicon can be explained by a model in which internal surfaces or voids have electronic states corresponding to those found on cleaned crystalline surfaces. The results on amorphous germanium deposited at 4K show an absorption edge of 0.36 eV and parabolic behavior over a large range of energies. This is to be compared with the behavior of films deposited at 300K which shows a threshold of 0.85 eV and a deviation from parabolic behavior around 1 eV.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1972
Accession Number
AD0760595

Entities

People

  • Robert Glosser
  • Rolfe E. Glover Iii

Organizations

  • University of Maryland

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Amorphous Materials
  • Annealing
  • Coefficients
  • Conductivity
  • Electrical Conductivity
  • Electrical Measurement
  • Electrical Properties
  • Energy
  • Energy Gaps
  • Low Temperature
  • Materials
  • Measurement
  • Optical Properties
  • Semiconductors
  • Universities

Fields of Study

  • Materials science

Readers

  • Approximation Theory.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene