EBS Diode Arrays.

Abstract

ECOM0286-F(*electron tube targets, *semiconductor diodes), design, silicon, electron irradiation, gain, electrical properties, damage, radiation effects, manufacturing, test methodsequivalent circuitsThe objective of the study was to determine methods of fabricating an array of silicon diodes for application in an electron beam semiconductor device. Diode array lateral dimensions were defined in the procurement specification. Poly silicon and phosphorous glass passivation layers were evaluated for their effects on the diode reverse characteristics under electron bombardment. Several of the 10 diode arrays were fabricated, tested and evaluated. Recommendations for making contacts to the top and bottom metal layers were also made. Ten diode arrays meeting the specified parameters were delivered to USAECOM for evaluation and use. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1973
Accession Number
AD0760602

Entities

People

  • Klaus K. Schuegraf

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Corpuscular Radiation
  • Diodes
  • Electrical Properties
  • Electromagnetic Radiation
  • Electron Beams
  • Electron Irradiation
  • Electron Tube Targets
  • Electron Tubes
  • Electrons
  • Radiation
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductor Diodes
  • Semiconductors
  • Subatomic Particles

Readers

  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene