Variation of Crystal Fermi Energy as a Method of Obtaining Different Charge States of Ions for ESR Study,

Abstract

Publications related to the ESR of paramagnetic impurity ions in a diamagnetic insulating host often contain statements of the form 'Element X enters crystal Y in the charge state N+'. Such a statement carries an exclusive implication which may or may not be intended, but which certainly is frequently unwarrented. It is quite possible for an impurity to have associated with it one or more trapping levels in the band gap of the host insulator. Under such circumstances a variety of charge states may be obtained and studied depending on the location of the Fermi level of the crystal in the band gap. Among the possible techniques for varying the Fermi level of a crystal, reduction and diffusion doping are discussed. (Modified author abstract)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1973
Accession Number
AD0760736

Entities

People

  • W. D. Ohlsen

Organizations

  • University of Utah

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Band Gaps
  • Band Structures
  • Dielectrics
  • Diffusion
  • Energy Bands
  • Fermi Levels
  • Impurities
  • Physical Properties

Readers

  • Materials Science and Engineering.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene