Defects Produced in Silver by KeV Silver Ion Bombardment,

Abstract

The nature and production mechanism of small defect clusters produced in single crystal silver films by room temperature bombardment with 5 to 20 KeV silver ions along (001) at low dose levels 10 to the 10th power - 10 to the 12th power ions/sq cm) was studied using electron microscopy. The defects were found to be of vacancy type over the entire energy range. (Modified author abstract)

Document Details

Document Type
Technical Report
Publication Date
Oct 30, 1969
Accession Number
AD0761414

Entities

People

  • T. Schober

Organizations

  • Cornell University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Crystals
  • Electron Microscopy
  • Electrons
  • Ion Bombardment
  • Microscopy
  • Optical Analysis
  • Production
  • Single Crystals
  • Subatomic Particle Manipulation
  • Subatomic Particles

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics