Device Implications of Ion Implantation Damage in Silicon,

Abstract

Thermal stimulated current and diode recovery measurements are presented for ion implanted silicon. The results are used to evaluate device possibilities such as bipolar transistors and hyperabrupt diodes where control of implantation damage is critical. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 30, 1973
Accession Number
AD0761486

Entities

People

  • D. Eirug Davies
  • Sven A. Roosild

Organizations

  • Air Force Cambridge Research Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Bipolar Junction Transistors
  • Charged Particles
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Governments
  • Implantation
  • Ion Implantation
  • Ions
  • Measurement
  • Microcircuits
  • Recovery
  • Transistors

Readers

  • Electronics Engineering
  • Semiconductor Device Technology