Study of the Effects of Radiation on the Electrical and Optical Properties of HgCdTe,
Abstract
The Hall coefficient and conductivity have been measured for several samples of Hg(0.8)Cd(0.2)Te. The measurements were made as a function of temperature from about 80 to 300K both before and after irradiation by 4.5- to 5-MeV electrons up to a fluence of 8.5 x 10 to the 14th power e/sq. cm. The carrier concentration and mobilities were calculated from these measurements. The behavior of an annealed sample after the irradiation can be understood in terms of a decrease in the bandgap - i.e., by a decrease in the amount of Cd present, and by the introduction of electron donor centers. The excess carrier lifetime was measured before irradiation as a function of temperature. It decreased from 0.5 microsec at 80K to about 10 to the minus 9th power sec at 200K. This strong decrease with temperature suggests direct recombination. The photoconductivity was measured as a function of wavelength at 80K. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1972
- Accession Number
- AD0761488
Entities
People
- Charles E. Mallon
- James E. Naber
- Joseph F. Colwell
- Roland E. Leadon