Magnetic and Electrical Properties of Ferromagnetic Semiconductors,
Abstract
Synthesis of new ferromagnetic semiconductors with given properties can be solved on the basis of detailed physical studies of the nature of magnetism and of the mechanism of the electronic conductivity of ferromagnetic semiconductors in connection with their chemical composition and crystalline structure. The basic groups of oxide compounds of 4f- and 3d-transition metals with maximum spin values were selected for the studies in this work. The oxide compounds of divalent europrium which were studied are new ferromagnetic semiconductors and dielectrics with different cyrstal structures. The ferrodielectrics which were synthesized and studies can apparently be applied in super-high frequency low-temperature and optical instruments, and also as memory elements. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 12, 1973
- Accession Number
- AD0762103
Entities
People
- A. A. Samokhvalov
Organizations
- United States Army Foreign Science and Technology Center