Mercury Cadmium Telluride 10.6-Micron Photodiode.
Abstract
Improvements have been made in the mercury diffusion fabrication process technology required for sensitive, high speed n on p mercury-cadmium-telluride (Hg,Cd)Te photodiode detectors that operate at 77K. Effort has been directed toward the investigation of surface p+ doping, zinc sulfide (ZnS) coating, diffusion masking, ion implantation, bulk material evaluation and annealing. An analysis of transit time effects has shown that p-type (Hg,Cd)Te substrate material produces diodes with frequency response a factor of 50 better than n-type (Hg,Cd)Te. Therefore, the prime approach for high frequency diodes will pursue n on p structures. Other selection criteria for substrate material have been determined as crystal perfection, 10 to the 17th power holes/cc p-type with low donor concentration, and minority carrier diffusion length greater than 10 microns. Successful results at surface passivation have been made with surface doping and ZnS coatings. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1973
- Accession Number
- AD0762167
Entities
People
- Donald A. Soderman
- T. Koehler
Organizations
- Honeywell International, Inc.