Bulk Semiconductor Limiters.
Abstract
DEVICES CAPABLE OF GIVING ISOLATION FROM HIGH POWER MICROWAVE SOURCES. A description is given of a doping process for the semiconductor contacts which can routinely produce moderately abrupt, highly doped contacts. The sheet resistivities are of the order of 3 and 10 ohms/square for the p+ and n+ regions respectively. Effective excess carrier lifetimes are in excess of 10 microsec. Descriptions are also given of methods for batch fabrication, however, the practicality of these methods has yet to be proven. The theoretical and empirical relations derived in previous programs has been reorganized and are presented here in a fashion better suited to design purposes. Empirical curves are given relating the single element limiter performance to the physical parameters of the semiconductor. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 05, 1973
- Accession Number
- AD0762168
Entities
People
- Albert L. Armstrong
- Jose M. Borrego
- Paul E. Bakeman Jr.
- Thomas M. Mortka