Lead-Tin-Chalcogenide Detector Substrate Development.
Abstract
The objective of this program was the development of technology necessary to provide high quality, single crystalline, lead-tin-telluride (PbSnTe) materials grown by vapor-phase epitaxy for ultimate use in the fabrication of infrared detectors and detector arrays. Work was performed in the following two major areas: (1) growth of large PbSnTe ingots by closed-tube epitaxy, and (2) growth of PbSnTe layers by open-tube epitaxy. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1973
- Accession Number
- AD0762344
Entities
People
- J. A. Zoutendyk
Organizations
- Xerox