Development of (Hg,Cd)Te Elevated Temperature Photovoltaic Detectors.
Abstract
The report describes the results on the first phase of a development program to design and fabricate 5 micron (Hg,Cd)Te photodiodes for 170K operation. The technique of ion implantation has been used to produce photodiodes exhibiting (D star)Lambda) values of 3 x 10 to the 10th power cm (Hz to the 1/2 power)/w at this temperature. The report describes the process and design considerations and predicted performance based on presently available material characteristics. Calculations show that in the 170K temperature range, the diode saturation current determines the achievable performance. Details of the characterization of the detectors and experimental areas for investigation in the second phase are discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1973
- Accession Number
- AD0762352
Entities
People
- Philip J. Mcnally
Organizations
- Honeywell International, Inc.