Junction Capacitance Techniques to Characterize Radiation Damage in Silicon.
Abstract
Capacitance-voltage and transient capacitance measurements were made on Schottky barrier-on-phosphorus-doped silicon diodes. Energy levels, emission coefficients, and associated introduction rates were determined for defects produced by 1.0-MeV electrons, Co(60)-gamma rays, and 5-MeV neutrons. Total defect introduction rates agree well with carrier removal data of companion Hall effect samples. In the electron- and gamma-irradiated samples, specific introduction data reveal radiation-induced traps at E(c) - 0.24 eV, E(c) - 0.44 eV, and below midgap. The introduction rate of the traps located below midgap exhibits a strong dependence on donor concentration. In neutron-irradiated, float-zoned silicon a band of shallow trap levels is evident along with levels at E(c) - 0.37 eV, E(c) - 0.40 eV, and below midgap. In neutron-irradiated, crucible-grown silicon, trap levels are observed at E(c) - 0.18 eV, E(c) - 0.23 eV, E(c) - 0.24 eV, E(c) - 0.31 eV, and below midgap. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 12, 1973
- Accession Number
- AD0762482
Entities
People
- H. M. Deangelis
- J. J. Fitzgerald
- J. W. Diebold
- L. C. Kimerling
Organizations
- Air Force Cambridge Research Laboratories