Boron Nitride Diffusion for LSI Processing

Abstract

The report describes the properties and behavior of boron nitride diffusion wafers for use in LSI processing. The results of the investigations conducted include the determination of proper handling procedures, B2O3 growth and volatilization kinetics, furnace parameters, and reliability and reproducibility.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1973
Accession Number
AD0762812

Entities

People

  • A. Turley
  • D. Rupprecht
  • J. Stach

Organizations

  • Pennsylvania State University

Tags

DTIC Thesaurus Topics

  • Acids
  • Ceramic Materials
  • Coefficients
  • Diffusion
  • Diffusion Coefficient
  • Diffusivity
  • Electronics
  • Flow Rate
  • Gas Flow
  • Geometry
  • Large Scale Integration
  • Materials
  • Measurement
  • Nitrogen
  • Physical Properties
  • Resistance
  • Vapor Pressure

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Computer Science/Computer Engineering/Data Science/Digital Signal Processing.
  • Semiconductor Device Technology