Dynamic Electric Field Profiles in Electron Beam Semiconductor Devices.
Abstract
ICONDUCTOR Devices.Research and development technical rept.,Weiner,Maurice ;McGowan,Joseph W. ;ECOM-4110DA-1-S-662705-A-0551-S-662705-A-05502(*semiconductor devices, electric fields), electrical properties, electron beams, radiofrequency amplifiers, carriers(semiconductors), semiconductor diodeselectron beam semiconductor amplifiersThe dynamic electric field profiles in the depletion region of Electron Beam Semiconductor (EBS) devices have been obtained. A sinusoidal, density modulated beam is assumed. The profile results have been applied to the problem of finding the peak power limits in an EBS amplifier, operating Class A. The dynamic theory indicates departures from the semistatic theory in output power. The departures are most significant in a rolloff region caused partly or entirely by transit time effects. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1973
- Accession Number
- AD0763296
Entities
People
- Joseph W. Mcgowan
- Maurice Weiner
Organizations
- United States Army Communications-Electronics Command