Structural Properties of Amorphous Semiconductors by Mossbauer Spectroscopy
Abstract
The amorphous to crystalline transition in vacuum deposited tellurium films has been observed using Mossbauer spectroscopy. Although the work is still preliminary, a large difference between the amorphous and crystalline forms of tellurium has been observed in the recoil free fraction as well as a smaller, but measurable, difference between the magnitudes of the quadrupole interactions. The samples studied contain 50% enriched tellurium-125 and are about 2 microns thick. Attempts to form thicker films have met with difficulties which may be overcome in further experiments. Thicker or higher enrichment films will result in better quality spectra which will be easier to analyze and interpret.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 31, 1973
- Accession Number
- AD0763408
Entities
People
- Norman Blum
Organizations
- Johns Hopkins University