Evaluation of Gallium Nitride for Active Microwave Devices.
Abstract
The study of the heterepitaxial growth of single crystal GaN was being undertaken both by open tube chemical vapor despotion and by organometal vapor transport growth. GaN thin film, deposited on (1,-1,0,2) sapphire, were typically transparent in color with the corresponding values of 0.15 mm thick (x 2 x 1 cm), 4 x 10 to the 18th power/cc carrier density and 90 sq. cm./v-sec mobility. Preliminary study for the drift velocity; and for good ohmic contacts and Schottky barrier materials were also made by I-V technique and photoresponse method. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1973
- Accession Number
- AD0763413
Entities
People
- H. S. Wing
- Murray Gershenzon
Organizations
- University of Southern California