Growth and Characterization of GaAs and Mixed III-V Semiconductor Compounds

Abstract

Gallium arsenide crystals were grown 1 cm in diameter by the gradient freeze technique and by the travelling heater method (THM) using a gallium zone. Optimal conditions for THM with a 1 cm long resistance heater were determined to be a heater temperature of 900C, a lowering rate of 1.5 mm/day, a 6 to 10 mm long zone, a 1 cm long seed and a feed ingot over 2 mm long. Experimental results agreed well with a classical constitutional supercooling analysis. Preliminary experiments of THM growth of Ga(x)In(1-x)Sb and Ga(x)Al(1-x)As were also performed. Classical constitutional supercooling theory was extended to multicomponent systems.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1973
Accession Number
AD0763761

Entities

People

  • Vincent F. Yip

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Reactions
  • Crystal Structure
  • Crystals
  • Electrical Properties
  • Heat Energy
  • Heat Of Fusion
  • Heat Transfer
  • Isotherms
  • Latent Heat
  • Mass Transfer
  • Materials
  • Materials Science
  • Measurement
  • Melting Point
  • Optical Materials
  • Phase Diagrams
  • Transition Temperature

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems