Thermal Response of Power Transistors.
Abstract
The report is a study of the thermal effects on planar epitaxial silicon power transistors. The primary objectives considered are power dissipation and junction temperature of the device. A nonlinear digital program model is developed with temperature being the dynamic factor. Theoretical techniques are developed to describe I sub(CBO), forward, and saturation region of operation, with respect to the temperature variable. Throughout the study, temperature has significant effects upon the operation of the silicon power transistor. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1973
- Accession Number
- AD0763903
Entities
People
- Dallas L. Thurman
Organizations
- United States Army Aviation and Missile Command