Reliability of High Field Semiconductor Devices.
Abstract
07-72-C-0101DA-1-S-662705-A-0561-S-662705-A-05601ECOM0101-72-I(*semiconductor diodes, reliability(electronics)), microwave oscillators, gallium arsenides, silicon, transients, failure(electronics), test methods, test equipmentgunn diodes, impatt diodes, transient radiation effects(electronics)The report describes the results of a continuing program of investigation concerning the reliability and failure modes of gallium arsenide Gunn, and IMPATT diodes and silicon IMPATT diodes. Data is presented concerning the burn-out distribution in time and parameter change of 553 Gunn diodes placed on high temperature dc burn-in. The results of Gunn diode switching transient reliability tests and long term dc burn-in data are also reported. Temperature measurement data on operating gallium arsenide Gunn and IMPATT diodes obtained using an infrared radiometer are presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1973
- Accession Number
- AD0763929
Entities
People
- John L. Heaton
- T. B. Ramachandran
Organizations
- M/A-COM Technology Solutions