The Dynamic Response of a Semiconductor Configuration to Electron Loading.

Abstract

. ;Halda,E. J. ;SSS-R-72-1410DAAG39-71-C-0003HDL-27322FHDL003-3(*silicon, damage), (*transistors, electron irradiation), transients, deformation, monte carlo method, (u)monte carlo methodresponse, transientsA two-dimensional elastic-plastic hydrodynamics code has been used to calculate the mechanical response of six axisymmetric semiconductor configurations to electron-beam loading. The grid response is displayed and discussed. The time variations of rear-surface velocities and displacements are shown at selected positions, while some rear-surface responses are exhibited as functions of radius at particular times. These calculations were performed for the prediction of, and comparison with, experimental measurements made on specimens tested using an electron accelerator at Harry Diamond Laboratories. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1972
Accession Number
AD0763943

Entities

People

  • E. J. Halda
  • J. W. Pritchett
  • K. G. Hamilton

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Axisymmetric
  • Buildings And Structures
  • Compound Semiconductors
  • Displacement
  • Dynamic Response
  • Electron Accelerators
  • Electron Beams
  • Electron Irradiation
  • Electronics
  • Electronics Laboratories
  • Electrons
  • Hydrodynamics
  • Measurement
  • Monte Carlo Method
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Computational Fluid Dynamics (CFD)
  • Nuclear and Radiation Engineering.
  • Structural Health Monitoring of Composite Structures.

Technology Areas

  • Directed Energy
  • Microelectronics