Noise in Microwave Semiconductor Oscillators and Amplifiers.

Abstract

ESTIGATION OF NOISE IN AVALANCHE TRANSIT-TIME DEVICES HAS BEEN CARRIED OUT. The main emphasis has been on oscillator noise which is characterized by AM and FM noise spectra. Detailed calculations have been carried out for determining the AM and FM noise in avalanche transit-time oscillators as a function of various operating parameters of the device, the diode structure and material properties as well as the external circuit. The theoretical results are compared with experimental results which were obtained for various operating points. These results lead to an improved understanding of noise in oscillators utilizing these devices. The effect of oscillator noise on the signal-to-noise ratio of a self-mixing avalanche-diode oscillator used in a short-range doppler radar is determined. AM noise is found to be the limiting factor with the contribution of video noise becoming important at low frequencies and small signal levels. (Modified author abstract)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1973
Accession Number
AD0764259

Entities

People

  • George I. Haddad
  • Joseph T Patterson
  • Madhu S. Gupta
  • Ronald J. Lomax

Organizations

  • University of Michigan

Tags

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Abstracts
  • Advanced Materials
  • Amplifiers
  • Avalanche Diodes
  • Compound Semiconductors
  • Diodes
  • Doppler Radar
  • Electronics
  • Engineered Materials
  • Frequency
  • Frequency Shift
  • Materials
  • Microwaves
  • Oscillators
  • Radar
  • Semiconductors

Readers

  • Acoustics.
  • Electronics Engineering

Technology Areas

  • Microelectronics