An Electron Paramagnetic Resonance Study of Indium Doped Zinc Oxide.

Abstract

Samples of zinc oxide doped with indium have been prepared using the vapor transport method. Concentration of dopant is controlled by appropriate mixing of the oxides of indium and zinc. When ZnO is mechanically damaged, three lines in the EPR spectrum with g-values at 2.0052, 2.0136, 2.0184 are induced. These are attributed to the interaction of adsorbed species and induced paramagnetic centers in the crystal. The relative intensity of the lines is affected by indium doping. (Modified author abstract)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1973
Accession Number
AD0764490

Entities

People

  • Coenraad Van Der Schroeff

Organizations

  • Naval Postgraduate School

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Electron Nuclear Double Resonance
  • Electron Paramagnetic Resonance
  • Electrons
  • Intensity
  • Magnetic Properties
  • Magnetic Resonance
  • Motion
  • Paramagnetic Resonance
  • Paramagnetism
  • Physical Properties
  • Resonance
  • Spectra
  • Transport Ships

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene