Spin-Flip Raman Scattering in Cadmium Sulfide.

Abstract

Spin-flip Raman scattering from bound electrons in n-type CdS was observed at liquid helium temperature using the 4880 A and 5145 A lines of an Argon ion laser. Scattering was observed in Cd- or In-doped samples with carrier concentrations of 7 x 10 to the 16th power to 4 x 10 to the 18th power/cc. The g-factor was determined to be 1.77 plus or minus 0.04 for magnetic fields of 33 to 95 kGauss. The linewidth measurements are consistent with a Lorentzian lineshape for the scattering. The relative Stokes and anti-Stokes intensities were measured at several field strengths, and the results indicate a spin temperature of 4.3K when the lattice is at liquid helium temperature. (Modified author abstract)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1972
Accession Number
AD0764699

Entities

People

  • Terrence Franklin Deaton

Organizations

  • Air Force Institute of Technology

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Argon Lasers
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Electrons
  • Intensity
  • Ion Lasers
  • Lasers
  • Magnetic Fields
  • Measurement
  • Raman Scattering
  • Scattering
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Microelectronics