Reliability Evaluation of 54L20 Radiation Hardened Dual Nand Gates,
Abstract
TRONICS)), DAMAGE, RADIATION EFFECTS, SILICIDES, RESISTORS, METAL FILMS, CHROMIUM COMPOUNDS, TESTSRADIATION HARDENING, THIN FILMSRadiation hardened low power microcircuits using high resistivity thin film chrome silicide resistors were evaluated by subjecting the devices to conventional high temperature stress tests and a special low temperature screen test. The predominant failure mechanisms of two failures generated under the high temperature stress tests consisted of oxide defects and surface inversion. Results of this test program indicated there were no thin film resistor failures in these devices either under high temperature or low temperature test conditions. It appears that the chrome silicide resistors show promise of improving the reliability of hardened circuits, however, other factors may be contributing to these observed results. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1973
- Accession Number
- AD0765173
Entities
People
- Edgar A. Doyle Jr.
- Jack S. Smith
- Vincent C. Kapfer
Organizations
- Rome Laboratory