Study of PbSnTe Single Heterojunction Diodes.
Abstract
The electrical and photovoltaic properties of single heterojunction (SH) Pb(1-x)Sn(x)Te diodes have been studied. SH diodes were fabricated by sequential depositions of p-type Pb(0.86)Sn(0.14)Te using stiochiometric source material and n-type Pb(0.80)Sn(0.20)Te using metal rich source material. At T = 77K, their energy gaps are 0.136 ev and 0.103 ev, respectively. SH diodes of good rectification with RoA products ranging from 3.5 to 18.6 have been obtained. Operated at 100K, 500K black body photovoltaic responses up to 0.2 volt/watt has been obtained. The current-voltage characteristics have been studied theoretically based on both the Anderson Diffusion Model and the Thermionic Emission Model. Using Anderson's model, and assuming delta E(c) = 0, constant electron affinity across the junction, fair agreements have been found between measurements and theoretical calculations. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1973
- Accession Number
- AD0765697
Entities
People
- Gordon Lee Smith
Organizations
- Naval Postgraduate School