Research on the Properties of Amorphous Semiconductors at High Temperatures

Abstract

The influence of illumination and annealing on thin films of amorphous As2Se3 and As2S3 has been studied through their effects on the structure and optical properties. It is shown that the dominant photostructural change in evaporated films is the polymerization of the as-deposited molecular (As4S6 or As4Se6) glass through either illumination or heating. This irreversible polymerization gives rise to a large absorption edge shift to smaller energy and to an appreciable index of refraction change. The reversible effect, called photo-darkening, is accompanied by a negligible refractive index change when compared with the irreversible polymerization change. The application of the present results to photochemical effects is discussed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 17, 1973
Accession Number
AD0766143

Entities

People

  • John P. Deneufville

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amorphous Materials
  • Chemical Reactions
  • Diffraction
  • Electron Beams
  • Electron Microscopy
  • Energy Bands
  • Glass
  • Glass Transition Temperature
  • Measurement
  • Microscopes
  • Optical Properties
  • Phase Diagrams
  • Refractive Index
  • Scattering
  • Semiconductors
  • Thin Films
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Polymer Science and Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene