Growth and Hardening of Alkali Halides for Use in Infrared Laser Windows

Abstract

Several undoped and Sr doped KCl crystals were grown from reagent grade powder in a crystal puller recently placed in operation. The Sr concentration in the doped crystals was varied from a few up to 650 parts per million (ppm) molar. The engineering flow stresses or yield points of these reagent grade crystals were measured. Values obtained range from 300 psi for undoped crystals to 2550 psi for the most heavily doped crystal. These results, as well as the Vickers microhardness results, are in good agreement with measurements on crystals grown at Oak Ridge National Laboratory (ORNL) using purified powders. The flow stress of high purity KCl from ORNL is found to increase from an unirradiated value of 300 psi to 2700 psi at an electron radiation dose which has introduced a Cl(o) interstitial concentration of 65 ppm. The increase in flow stress is directly proportional to the square root of the defect concentration for both Sr doped and irradiated KCl crystals. This result is in good agreement with Fleischer's theory.

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Document Details

Document Type
Technical Report
Publication Date
Apr 30, 1973
Accession Number
AD0766251

Entities

People

  • Charles T. Butler
  • Joe A. Miller
  • Joel J. Martin
  • John R. Hopkins
  • William A. Sibley

Organizations

  • Oklahoma State University–Stillwater

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Chemistry
  • Color Centers
  • Crystal Growth
  • Crystal Lattices
  • Crystallography
  • Crystals
  • Impurities
  • Infrared Lasers
  • Materials
  • Measurement
  • Mechanical Properties
  • Optical Properties
  • Physics
  • Point Defects
  • Stress Strain Relations
  • United States

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Mechanical Engineering/Mechanics of Materials.
  • Nuclear and Radiation Engineering.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Microelectromechanical Systems