Investigation of the Absorption Coefficient of Neutron Irradiated Silicon Doped with Li or Cu.
Abstract
Infrared spectroscopy studies, of Li, and Cu-doped and Li-B compensated irradiated Si are reported. In Li-containing Si, divacancy-associated bands and several new bands were observed which are associated with at least three different defect complexes in which lithium impurities are directly involved. The production and recovery of divacancies depend strongly upon the Li concentration. Simple lithium-associated defects, such as the Li-vacancy, are also produced during irradiation whose dissociation enhances the concentration of other Li-associated defect complexes. In Li-B compensated Si, several new absorption bands and a huge near-edge absorption are observed accompanied by a decrease in the Li-B vibrational bands during irradiation. The near-edge absorption depends not only on the neutron fluence but also on the number of Li-B pairs which play an important role in the formation of defect complexes. No Cu-associated band is observed before or after irradiation of the Cu diffused samples. The presence of Cu impurities in Si does not affect the production of the divacancy, implying no interaction of Cu with radiation-induced defects. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1973
- Accession Number
- AD0766768
Entities
People
- Chau Shion Chen
- John C. Corelli
Organizations
- Rensselaer Polytechnic Institute