Raman Scattering in Narrow-Gap Semiconductors.

Abstract

The nature of the Raman scattering process is discussed, as well as the form of the Raman scattering cross-section and the way in which various excitations can contribute to the scattering. The lattice dynamics of the zero-gap semiconductor (semi-metal) graphite is investigated. A description of the Raman equipment and experimental procedure is also presented. Electric field-induced Raman scattering is introduced and a general background of the two important types of electric field-induced experiments is presented which focusses on paraelectric soft mode behavior and the effects of surface space charge regions. Surface electric field-induced Raman scattering in the cubic IV-VI compound semiconductors PbTe, PbS, PbSe, and SnTe is investigated.

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1972
Accession Number
AD0766853

Entities

People

  • Leonard Jack Brillson

Organizations

  • University of Pennsylvania

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electric Fields
  • Lattice Dynamics
  • Modules (Electronics)
  • Narrow Band Gap Semiconductors
  • Raman Scattering
  • Scattering
  • Scattering Cross Sections
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Space Charge
  • Zero Gap Semiconductors

Fields of Study

  • Materials science

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster