Oxide Charge Trapping Induced by Ion Implantation in SiO2.
Abstract
Experimental measurements directed at understanding oxide modifications induced by Na+ and Al+ ion implantation are described. Both implanted species created high dark conductivity in unannealed specimens. This had a temperature dependence independent of ion type suggesting that the conductivity is related to displacement damage. Internal photoemission studies showed that Na+ implantation had produced a barrier lowering at both interfaces and also permitted sub-threshold photoemission starting with photons of about 1 eV. Thermal annealing returned the oxide to its insulating state and removed the sub-threshold photoemission. Photodepopulation measurements indicated that the oxide still contained electron traps not present in the unimplanted samples. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 24, 1973
- Accession Number
- AD0767054
Entities
People
- Barrie S. H. Royce
- Eli Harari
Organizations
- Princeton University