Advanced Concepts of Microwave Generation and Control in Solids.
Abstract
Control in Solids.Technical rept., 1 Jan-31 Mar 73,Dalman,G. C. ;Eastman,L. F. ;Lee,C. A. ;Frey,F. ;F30602-71-C-0110RADCTR-73-196(*microwave oscillators, *semiconductor diodes), microwave amplifiers, harmonic generators, avalanche diodes, silicon, l band, x band, field effect transistors, gallium arsenides, indium compounds, phosphides, ionization, doping, epitaxial growthlsa diodes, schottky barrier devices, semiconductor diodes, indium phosphides, ion implantation, avalanche diodesContents: Multi-Mesa TRAPATT fabrication, high frequency high efficiency avalanche oscillators, high frequency Pt-n-p+ diodes, BARITT devices, microwave field-effect transistors, amplifier properties, computer experiments on TRAPATT diodes, c.w. high performance TEO, growth and evaluation of InP for LSA oscillations, ion implantation and diffusion, ionization rates in GaAs, vacuum epitaxial growth in silicon, gallium arsenide microwave monolithic integrated circuit study.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1973
- Accession Number
- AD0767225
Entities
People
- Charles A. Lee
- F. Frey
- G. Conrad Dalman
- Lester F. Eastman
Organizations
- Cornell University