Fundamental Studies of Semiconductor Heteroepitaxy (Part 3)

Abstract

;Contents: Work functions and surface double layer potentials of monovalent metals from a network model; Anisotropy in electrical properties of (001)Si(0112)Al2O3; Anisotropy in the electrical properties of N-type (221)Si/ (1122)Al2O3; Stress induced anisotropy in the electrical properties of Si/Al2O3; Bibliography - electron microscope in situ nucleation and growth studies; Electron scattering by gaseous atoms; Preliminary EM6 modifications for in situ chemical vapor deposition.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1973
Accession Number
AD0767289

Entities

People

  • A. J. Hughes
  • Arthur C. Thorsen
  • Harold M. Manasevit
  • Joseph L. Kenty
  • Ralph P. Ruth

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Carrier Mobility
  • Chemistry
  • Crystal Growth
  • Crystals
  • Diffraction
  • Electromagnetic Fields
  • Electron Microscopes
  • Electron Microscopy
  • Epitaxial Growth
  • Heat Energy
  • Materials
  • Measurement
  • Microscopes
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Materials Science (Mechanical Engineering).
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene