The Determination of Semiconductor Junction Vulnerability to Second Breakdown by Low Energy Electrical Measurements.
Abstract
The possibility of correlations between second breakdown energy characteristics and low level junction parameters for diodes was investigated. The low level parameters considered were ac resistance in the first breakdown region, reverse current, first breakdown voltage, breakdown voltage of the first microplasma region, and the resistivity of the high resistivity side of the junction. The diodes studied consisted of the collector-base junctions of the 2N2222, 2N2862, and 2N3304 bipolar transistors. No correlations between low level electrical measurements and second breakdown energy evaluated for a 1 millisecond pulse width were observed for any group of devices or for any comparison between device types. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 30, 1973
- Accession Number
- AD0767365
Entities
People
- Edward C. Friday
- Hamish H. Wong
- Wayne H. Causey
- Wilford D. Raburn
Organizations
- University of Alabama