Reaction Kinetics of Pd and Ti-Al Films on Si,

Abstract

The growth of compound phases from thin film layers of Pd and Ti-Al deposited on Si is described in this work. The growth kinetics and composition of the compound phases were measured utilizing 2 MeV 4He backscattering. Crystalline structure and film texture effects of the compounds layers were measured by X-ray diffraction techniques. The Ti-Al metal system is used to make contact to Si in integrated circuit applications. Compound phases in this system can be directly related to severe erosion of metal -Si contact areas which result in failure of the integrated circuits. The rate kinetics are found to have practical application in predicting and controlling a failure mechanism in an integrated circuit metallization scheme. (Modified author abstract)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1973
Accession Number
AD0767572

Entities

People

  • Robert W. Bower

Organizations

  • California Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Kinetics
  • Circuits
  • Diffraction
  • Failure Mode And Effect Analysis
  • Films
  • Integrated Circuits
  • Kinetics
  • Thin Films
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.