The Refractive Index of Pb(1-x)Sn(x)Te, Pb(1-y)Sn(y)Se, and PbS(1-x)Se(x) and Theoretical Calculations for Pb(1-x)Sn(x)Te and Pb(1-y)Sn(y)Se 10.6 Micron Heterostructure Injection Lasers.

Abstract

The refractive indices, n, in the fundamental absorption edge regions of three alloy semiconductors, Pb(1-x)Sn(x)Te, Pb(1-y)Sn(y)Se, and PbS(1-x)Se(x), are investigated. Preliminary results of the refractive indices of PbS(1-x)Se(x) thin films are presented. For Pb(1-x)Sn(x)Te and Pb(1-y)Sn(y)Se, empirical relationships for n have been determined as a function of wavelength, composition, and temperature, using refractive index data previously measured in this laboratory. In the second part of this work, the laser performances of double heterojunction Pb(1-x)Sn(x)Te and Pb(1-y)Sn(y)Se injection lasers emitting 10.6 micrometer radiation and operated at 85K, were theoretically calculated. Threshold current and lasing output power as functions of compositions and laser geometry, were calculated as a guide for optimum design. Threshold current dansities of less than 200A/sq cm and output power of more than 2mW with 1A bias current were calculated for diodes of 1sq mm cross section, operated at 85K. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1973
Accession Number
AD0767677

Entities

People

  • Walter George Opyd

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Buildings And Structures
  • Compound Semiconductors
  • Electronics
  • Electronics Laboratories
  • Films
  • Geometry
  • Heterojunctions
  • Micrometers
  • Radiation
  • Refractive Index
  • Research Facilities
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Thin Films

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics