Studying Pressure of Saturated Vapors of Some Semiconductors by Means of Radioactive Isotopes,

Abstract

The object was to study the pressure of saturated vapors in a number of semiconductor compounds and solutions and to clarify certain processes which occur during evaporation. The most exact determination of saturated vapor pressure is obtained by using radioactive isotopes. In order to achieve the goal (test) devices and a work technique are developed.

Document Details

Document Type
Technical Report
Publication Date
Sep 12, 1973
Accession Number
AD0768053

Entities

People

  • M. G. Shakhtakhtinskii

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Evaporation
  • Fluids
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Partial Pressure
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • Vapor Pressure
  • Vapors

Readers

  • Combustion and Flow Dynamics.
  • Nuclear and Radiation Engineering.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene