Molecular Beam Epitaxy of II-VI Compound Waveguides

Abstract

Optical waveguide growth is being pursued using molecular beam epitaxy, a closely-controlled form of vacuum evaporation, under ultra-high vacuum. Zn and Te2 vapor pressures over the elements and over ZnTe have been measured and correlated with film growth behaviour. Optically-clear, mirror- smooth, monocrystalline, 1 micron thick films of ZnTe have been grown at 1 micron/hour on 350C CaF2(111) substrates using separate elemental sources of 6- nines pure Zn and Te. Film stoichiometery was insensitive to incident Zn/Te flux ratio. Films were polycrystalline at 450C and ceased to deposit at 500C. Films grown from a single 5-nines pure ZnTe source of inferior quality. Single-crystal CdSe(0001) substrates have been prepared by Br/MeOH polishing and ion bombardment.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1973
Accession Number
AD0768283

Entities

People

  • Donald L. Smith

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemistry
  • Compound Semiconductors
  • Crystal Structure
  • Crystals
  • Epitaxial Growth
  • High Vacuum
  • Ion Bombardment
  • Mass Spectrometers
  • Mass Spectrometry
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Waveguides
  • Single Crystals
  • Thick Films
  • Vapor Pressure

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.