Analysis of Semiconductor Structures by Nuclear and Electrical Techniques.

Abstract

The report covers three relatively distinct areas of investigations; studies of Al2O3 and Si3N4 thin films, reactions in thin solid films and doping by ion implantation. Common to all this work is the use of ion backscattering spectrometry as the principle analytical tool, supported by a number of other techniques. Among these, x-ray diffraction and scanning electron microscopy were found to be particularly well suited to supplement backscattering. (Modified author abstract)

Document Details

Document Type
Technical Report
Publication Date
May 05, 1973
Accession Number
AD0768444

Entities

People

  • Akio Kiraki
  • Eri-k Chu
  • Jacob D. Haskell
  • Mototaka Kamoshida
  • Robert W. Bower

Organizations

  • California Institute of Technology

Tags

DTIC Thesaurus Topics

  • Backscattering
  • Diffraction
  • Electron Microscopy
  • Films
  • Implantation
  • Ion Implantation
  • Ions
  • Microscopy
  • Scanning Electron Microscopy
  • Semiconductors
  • Thin Films
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Approximation Theory.
  • Theoretical Analysis.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene