Susceptibility of Semiconductor Devices to Thermal Second Breakdown,
Abstract
A method for determining the susceptibility of semiconductor devices to damage from an electromagnetic pulse (EMP) due to induced thermal second breakdown is described. The method can be used as a nondestructive screening test. It is based on the increase in junction reverse breakdown voltage with temperature and can be used to find the most EMP resistant devices of a given type. A mathematical explanation is presented, and other tentative applications are proposed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 21, 1973
- Accession Number
- AD0768751
Entities
People
- Norman S. Cohn
Organizations
- Naval Ordnance Laboratory