Electron Beam Evaporated Aluminum Oxide Gate Silicon Transistors.
Abstract
Aluminum oxide films prepared by the electron beam evaporation of Al2O3 tablets were studied in metal-insulator-semiconductor devices. The structure of Al2O3 films is amorphous with a density of 2.25 gm/cc. The film conductivity is smaller than 5 x 10 to the 14th power (ohm-cm) and the breakdown strength is higher than 1,300,000 V/cm. The average relative dielectric constant is about 7. The interface surface states of the MIS sample are small in the middle of the forbidden band, gradually increasing toward the band edges. The MIS devices have interface surface state densities larger than 3.4 x 10 to the 10th power states/sq cm. Both n- and p-channel MOSFETs with electron beam evaporated Al2O3 as the gate insulator were fabricated successfully. The n-channel MOSFET has an average threshold voltage of -2.3 volts and an average channel mobility of 207 sq cm/V-sec. The p-channel MOSFET has an average threshold voltage of -1.5 volts and an average channel mobility of 103.5 sq cm/V-sec. The radiation resistance of the fabricated n- and p-channel MOSFETs was tested with neutrons, gamma rays, and electrons. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1973
- Accession Number
- AD0769168
Entities
People
- Chang-ching Cheng
Organizations
- University of New Mexico