Doped Semiconductors in an Inhomogeneous Magnetic Field.
Abstract
It is shown that a potential difference is generated across a semiconductor sample containing free carriers when the sample is in a magnetic field gradient in the direction of the field. A measurement of the potential difference can give direct information concerning the effective mass and effective g-factor of the free carriers. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1973
- Accession Number
- AD0769547
Entities
People
- Richard F. Wallis
- S. L. Conningham
Organizations
- University of California, Irvine