Thermal Oxidation of Gallium Arsenide Phosphide.
Abstract
The work covers the most important basic facts about the thermal oxidation of gallium arsenide phosphide. The work is confined to lightly doped GaAs(1-x)P(x) material with a phosphorus mole fraction of 0.50 plus or minus 0.02. Growth speed of the film at temperatures near 700C was measured. The upper bound on the oxidation temperature was found. The insulator film was shown to be beta-Ga2O3 and berlinite-type GaPO4. Relative concentrations of the two compounds were obtained by two completely independent experiments. An ion backscattering experiment showed the existence of a disordered layer below the insulator film. Capacitance vs voltage data were obtained from a large number of MIS capacitors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1973
- Accession Number
- AD0769628
Entities
People
- Leo Edward Coerver
- Wayne W. Grannemann
Organizations
- University of New Mexico