Synthesis of Compound Semiconducting Materials and Device Applications

Abstract

;Contents: Epitaxial crystal growth; Device applications of GaAs; Relations between dislocations and mechanical properties and the production and characterization of defect structures in compound semiconductors; Scientific aspects of gallium arsenide crystal preparation; The synthesis, characterization and device application of gallium nitride: preparation of GaN light-emitting diodes.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1973
Accession Number
AD0769764

Entities

People

  • B. L. Mattes
  • D. A. Stevenson
  • Gordon S. Kino
  • R. H. Bube
  • R. K. Route
  • Robert S. Feigelson
  • W. A. Tiller
  • W. D. Nix

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Acoustic Waves
  • Ceramic Materials
  • Chemical Reactions
  • Chemistry
  • Compound Semiconductors
  • Crystal Structure
  • Dielectric Gases
  • Electrical Properties
  • Energy Bands
  • Fluids
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Piezoelectric Crystals
  • Semiconductors
  • Silica Glass
  • Temperature Gradients

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics